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2N5741 Scheda tecnica(PDF) 2 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
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2N5741 Scheda tecnica(HTML) 2 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
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2 / 3 page ![]() Product Specification www.jmnic.com JMnic Silicon PNP Power Transistors 2N5741 2N5742 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT 2N5741 60 VCEO Collector-emitter sustaining voltage 2N5742 IC=0.2A ;IB=0 100 V VCEsat-1 Collector-emitter saturation voltage IC=10A; IB=1A 1.0 V VCEsat-2 Collector-emitter saturation voltage IC=20A ;IB=4A 3.0 V VBEsat Base-emitter saturation voltage IC=10A; IB=1A 1.8 V VBE Base-emitter on voltage IC=10A ; VCE=5V 1.5 V ICBO Collector cut-off current VCB=Rated VCBO; IE=0 0.1 mA ICEX Collector cut-off current VCE= Rated VCEO; VBE(off)=1.5V TC=150℃ 0.5 5.0 mA IEBO Emitter cut-off current VEB=5V; IC=0 1.0 mA hFE-1 DC current gain IC=10A ; VCE=5V 20 80 hFE-2 DC current gain IC=20A ; VCE=5V 10 fT Transition frequency IC=1A ; VCE=10V 10 MHz |
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