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2N6833 Scheda tecnica(PDF) 2 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
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2N6833 Scheda tecnica(HTML) 2 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
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2 / 3 page ![]() JMnic Product Specification 2 Silicon NPN Power Transistors 2N6833 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A ;IB=0 450 V VCEsat-1 Collector-emitter saturation voltage IC=1.5A;IB=0.15A 1.0 V VCEsat-2 Collector-emitter saturation voltage IC=3A;IB=0.4A TC=100℃ 2.5 2.5 V VBE sat Base-emitter saturation voltage IC=3A;IB=0.4A TC=100℃ 1.5 1.5 V ICEV Collector cut-off current VCE=850V;VBE=-1.5V TC=105℃ 0.25 1.5 mA IEBO Emitter cut-off current VBE=6V; IC=0 1.0 mA hFE-1 DC current gain IC=3A ; VCE=5V 7.5 30 hFE-2 DC current gain IC=5A ; VCE=5V 5 Cob Output capacitance IE=0 ; f=1kHz,VCB=10V 20 200 pF fT Transition frequency IC=0.25A ; VCE=10V;f=10MHz 15 75 MHz |
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