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Motore di ricerca datesheet componenti elettronici |
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2SB943 Scheda tecnica(PDF) 2 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
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2SB943 Scheda tecnica(HTML) 2 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
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2 / 3 page  JMnic Product Specification 2 Silicon PNP Power Transistors 2SB943 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-10mA ,IB=0 -80 V VCEsat Collector-emitter saturation voltage IC=-2A, IB=-0.1A -0.5 V VBEsat Base-emitter saturation voltage IC=-2A, IB=-0.1A -1.5 V IEBO Emitter cut-off current VEB=-5V; IC=0 -50 μA ICBO Collector cut-off current VCB=-100V; IE=0 -10 μA hFE-1 DC current gain IC=-0.1A ; VCE=-2V 45 hFE-2 DC current gain IC=-0.5A ; VCE=-2V 60 260 fT Transition frequency IC=-0.5A; VCE=-10V 30 MHz Switching times ton Turn-on time 0.3 μs tstg Storage time 1.1 μs tf Fall time IC=-0.5A;IB1=-IB2=-50mA 0.3 μs hFE-2 Classifications R Q P 60-120 90-180 130-260 |
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