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ESJC50-08 Scheda tecnica(PDF) 1 Page - GETAI ELECTRONICS DEVICE CO., LTD |
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ESJC50-08 Scheda tecnica(HTML) 1 Page - GETAI ELECTRONICS DEVICE CO., LTD |
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1 / 1 page ![]() 8.0kV 500mA HIGH VOLTAGE DIODE Maximum Reverse Recovery Time Trr at 25°C 50 nS ESJC50-08 Features High speed switching Low VF High surge resisitivity for CRT discharge High reliability design Ultra small pakage Applications Maximum Ratings and Characteristics Absolute Maximum Ratings Items Repetitive Peak Renerse Voltage Average Output Current Suege Current Junction Temperature Allowable Operation Case Temperature Symbols VRRM IO IFSM Tj Tc Condition Ta=25°C,Resistive Load 500 125 125 -40 to +125 Units kV mA Apeak °C °C °C Electrical Characteristics (Ta=25°C Unless otherwise specified ) Items Maximum Forward Voltage Drop Maximum Reverse Current Symbols VF IR1 IR2 Conditions at 25°C,IF at 25°C,VR at 100°C,VR Units V µA µA Junction Capacitance Cj at 25°C,VR Storage Temperature Tstg is high reliability resin molded type high voltage diode in small size package which is sealed a multilayed mesa type silicon chip by epoxy resin. Outline Drawings : mm Cathode Mark 20 min. 20 min. 22 o 7.5 o 1.28 Cathode Mark Lot No. 2014 =0V,f=1MHz - ESJC50-08 Type Mark ESJC50-08 ESJC50-08 15 10 1.0 50 8.0 X light Power supply Laser Voltage doubler circuit Microwave emission power pF ESJC50-08 =IF(AV) =VRRM =VRRM ESJC50-08 HVGT GETE ELECTRONICS CO.,LTD Http://www.getedz.com E-mail:sales@getedz.com HVGT DO-721 |
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