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520E940C Scheda tecnica(PDF) 2 Page - HB Electronic Components

Il numero della parte 520E940C
Spiegazioni elettronici  All Dimensions are in millimeters
PDF  3 Pages
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Produttore elettronici  HB [HB Electronic Components]
Homepage  http://www.hebeiltd.com.cn
Logo HB - HB Electronic Components

520E940C Scheda tecnica(HTML) 2 Page - HB Electronic Components

  520E940C Datasheet HTML 1Page - HB Electronic Components 520E940C Datasheet HTML 2Page - HB Electronic Components 520E940C Datasheet HTML 3Page - HB Electronic Components  
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5.0mm INFRARED EMITTING DIODE
520E940C
REV:A / 0
FEATURES
* EXTRA HIGH RADIANT POWER AND RADIANT INBTENSITY
* LOW FORWARD VOLTAGE
* SUITABLE FOR HIGH PULSE CURRENT OPERATIONTENSITY
*HIGH RELIABILITY
CHIP MATERIALS
* Dice Material : GaA1As/GaAs
* Lens Color : WATER CLEAR
ABSOLUTE MAXIMUM RATING : ( Ta = 25°C )
SYMBOL
PARAMETER
INFRARED
UNIT
PD
Power Dissipation
100
mW
VR
Reverse Voltage
5
V
IF
Average Forward Current
100
mA
Topr
Operating Temperature Range
-35°C to 85°C
Tstg
Storage Temperature Range
-35°C to 85°C
Lead Soldering Temperature｛1.6mm(0.063 inch) From Body｝250°C ± 5°C for 3 Seconds
ELECTRO-OPTICAL CHARACTERISTICS : ( Ta = 25°C )
SYMBOL
PARAMETER
TEST
CONDITION
MIN. TYP. MAX. UNIT
VF
Forward Voltage
IF =
10mA
IF =
50mA
1.2
1.4
1.6
V
IR
Reverse Current
VR = 5V
10
µA
λP
Peak Emission Wavelength
IF =
10mA
940
nm
2θ1/2
Half Intensity Angle
IF =
10mA
2
2
deg
IE
Radiant Intensity
IF =
10mA
30
mw/sr
DRAWING NO. : DS-23-02-0005
DATE : 2002-02-28
Page :
2
QR0202-10C



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