EC2612 datasheet(7/8 Pages) UMS

7 / 8 page

40GHz Super Low Noise pHEMT

EC2612

Ref. : DSEC26120077 -17-Mar-00

7/8

Specifications subject to change without notice

Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE

Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09

(CHIP) Equivalent Circuit model (Drain and Gate bond wires included)

Cg d

Cds

Rd s

Ta u

G m

Cg s

Vg s

backside of substrate

Parameter

Unit

Value

152.54

Ohms

0.13

Cgs

142.6

Ohms

3.2

Cgd

39.57

Ohms

2.83

0.11

98.14

Tau

2.8

Cds

46.84

Rds

Ohms

116.8

Ohms

2.83

117.01

Typical Noise Parameters at Vds=2V, Ids=14mA

(Drain and Gate bond wires included)

FREQUENCY

NF min

ΓΓΓΓopt

MHz

MOD.

Ang.(°)

5000

0.26

0.811

19.888

14.089

8000

0.356

0.746

32.28

13.33

12000

0.492

0.658

49.899

11.87

15000

0.595

0.598

64.263

10.51

20000

0.762

0.514

91.037

7.965

24000

0.892

0.473

114.916

5.923

28000

1.01

0.460

139.673

4.16

30000

1.07

0.465

151.723

3.473

32000

1.137

0.475

163.219

2.966

35000

1.223

0.5

179.087

2.63

38000

1.307

0.533

-166.857

2.923

40000

1.362

0.556

-158.467

3.538

42000

1.415

0.581

-150.795

4.536

45000

1.493

0.618

-140.488

6.843

EC2612 Scheda tecnica(PDF) 7 Page - United Monolithic Semiconductors

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