MBRF60040R datasheet(1/3 Pages) GENESIC

Il numero della parte	MBRF60040R

Spiegazioni elettronici	High Surge Capability

PDF	3 Pages

Scroll/Zoom	100%

Produttore elettronici	GENESIC [GeneSiC Semiconductor, Inc.]

Homepage	http://www.genesicsemi.com/

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1 / 3 page

VRRM = 20 V - 40 V

IF(AV) = 600 A

Features

• High Surge Capability

TO-244AB Package

• Types from 20 V to 40 V VR

• Not ESD Sensitive

Parameter

Symbol

MBRF60020(R) MBRF60030(R)

Unit

Repetitive peak reverse

voltage

VRRM

20

30

V

RMS reverse voltage

VRMS

14

21

V

MBRF60020 thru MBRF60040R

MBRF60040(R)

35

25

MBRF60035(R)

Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)

Silicon Power

Schottky Diode

Conditions

40

28

DC blocking voltage

VDC

20

30

V

Operating temperature

Tj

-55 to 150

°C

Storage temperature

Tstg

-55 to 150

°C

Parameter

Symbol

MBRF60020(R) MBRF60030(R)

Unit

Average forward current

(per pkg)

IF(AV)

600

A

Maximum forward voltage

(per leg)

0.75

11

10

50

Thermal characteristics

Thermal resistance, junction-

case (per leg)

R

ΘJC

0.12

°C/W

600

4000

50

Electrical characteristics, at Tj = 25 °C, unless otherwise specified

Reverse current at rated DC

blocking voltage (per leg)

IR

VF

-55 to 150

MBRF60040(R)

11

0.12

50

MBRF60035(R)

Tj = 25 °C

IFM = 300 A, Tj = 25 °C

Conditions

-55 to 150

0.75

0.12

Tj = 150 °C

TC = 125 °C

600

IFSM

tp = 8.3 ms, half sine

4000

Tj = 100 °C

10

mA

V

-55 to 150

40

35

Peak forward surge current

(per leg)

A

10

www.genesicsemi.com/silicon-products/schottky-rectifiers/

1

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