2SC2881G-X-AB3-R datasheet(2/4 Pages) UTC

2 / 4 page

2SC2881

NPN SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

2 of 4

www.unisonic.com.tw

QW-R208-032.C



ABSOLUTE MAXIMUM RATINGS (TA= 25°C, unless otherwise specified)

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-base voltage

VCBO

120

Collector-emitter voltage

VCEO

120

Emitter-base voltage

VEBO

Collector current

800

Base current

160

Collector power dissipation

500

Junction temperature

150

C

Storage temperature range

TSTG

-55 ~ 150

C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.



ELECTRICAL CHARACTERISTICS (TA= 25°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITION

MIN TYP MAX UNIT

Collector-emitter breakdown voltage

V(BR)CEO

IC=10mA, IB=0

120

Emitter-base breakdown voltage

V(BR)EBO

IE=1mA, Ic=0

Collector cut-off current

ICBO

VCB=120V, IE=0

0.1

μA

Emitter cut-off current

IEBO

VEB=5V, IC=0

0.1

μA

DC current gain

hFE

VCE=5V, IC=100mA

240

Collector-emitter saturation voltage

VCE(SAT)

IC=500mA, IB=50mA

1.0

Base-emitter voltage

VBE

VCE=5V, IC=500mA

1.0

Transition frequency

VCE=5V, IC=100mA

120

MHz

Collector output capacitance

COB

VCB=10V, f=1MHz, IE=0



CLASSIFICATION OF hFE

RANK

RANGE

80 - 160

120 - 240

2SC2881G-X-AB3-R Scheda tecnica(PDF) 2 Page - Unisonic Technologies

2SC2881G-X-AB3-R Scheda tecnica(HTML) 2 Page - Unisonic Technologies

Html Pages

1 2 3 4

Scheda tecnica Scarica

Link URL