MMBT5089G-AE3-R datasheet(2/7 Pages) UTC

2 / 7 page

MMBT5088/MMBT5089

NPN SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,Ltd

2 of 7

www.unisonic.com.tw

QW-R206-033.C



ABSOLUTE MAXIMUM RATING (TA=25°C, unless otherwise specified)

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Emitter voltage

MMBT5088

VCEO

MMBT5089

Collector-Base voltage

MMBT5088

VCBO

MMBT5089

Emitter-base voltage

VEBO

4.5

Collector current-continuous

100

Total Device Dissipation

350

Linear Derating Factor above TA= 25°C

2.8

mW/°C

Junction Temperature

125

°C

Operating Temperature

TOPR

-40 ~ +150

°C

Storage Temperature

TSTG

-40 ~ +150

°C

Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. These ratings are based on a maximum junction temperature of 150 degrees C.

3. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty

cycle operations.



THERMAL DATA (TA=25°C, unless otherwise specified)

PARAMETER

SYMBOL

RATINGS

UNIT

Junction to Ambient

JA

357

°C/W

MMBT5089G-AE3-R Scheda tecnica(PDF) 2 Page - Unisonic Technologies

MMBT5089G-AE3-R Scheda tecnica(HTML) 2 Page - Unisonic Technologies

Html Pages

1 2 3 4 5 6 7

Scheda tecnica Scarica

Link URL