TIP32CG-TN3-R datasheet(2/3 Pages) UTC

2 / 3 page

TIP32C

PNP SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

2 of 3

www.unisonic.com.tw

QW-R209-017,D

ABSOLUATE MAXIUM RATINGS (TA=25°C)

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Base Voltage

VCBO

-100

Emitter-Base Voltage

VEBO

-5

Collector Current

-3

PULSE

ICM

-5

Base Current

-1

Power Dissipation

TO-220

TO-126S/TO-126

1.25

TO-252

Junction Temperature

+150

°C

Storage Temperature

TSTG

-40 ~ +150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified.)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNIT

Collector Emitter Sustaining Voltage

(Note)

BVCEO

IC=-30mA,IB=0

-100

Collector Cutoff Current

ICES

VCE=-100V, VBE=0

-200

μA

Collector Cutoff Current

ICEO

VCE=-60V, IB=0

-0.3

Emitter Cutoff current

IEBO

VBE=-5V, IC=0

-1

Collector-Emitter Saturation Voltage

(Note)

VCE(SAT)

IC=-3A, IB=-375mA

-1.2

Base-Emitter On Voltage*

VBE(ON)

IC=-3A, VCE=-4A

-1.8

DC Current Gain (Note)

hFE

IC=-1A, VCE=-4V

IC=-3A, VCE=-4V

Current Gain Bandwidth Product

IC=-0.5A,VCE=-10V, f=1MHz

MHz

Note: Pulse Test: PW≤300μs, Duty Cyle≤2%

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