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UP2518L-AE3-R Scheda tecnica(PDF) 2 Page - Unisonic Technologies |
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UP2518L-AE3-R Scheda tecnica(HTML) 2 Page - Unisonic Technologies |
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2 / 3 page ![]() UP2518 Preliminary PNP TRANSISTOR UNISONICTECHNOLOGIESCO.,LTD 2 of 3 www.unisonic.com.tw QW-R206-083.Bb ABSOLUTE MAXIMUM RATING (Ta= 25°C, unless otherwise stated) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO -20 V Collector-Emitter Voltage VCEO -20 V Emitter-Base Voltage VEBO -5 V Peak Pulse Current (Note 2) IPEAK -6 A Continuous Collector Current IC -1.5 A Base Current IB -500 mA Power Dissipation (Note 3) Ta =25°C PD 625 mW Junction Temperature TJ +150 °С Storage Temperature TSTG -55~+150 °С Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Pulse width=300µs. Duty cycle≤2% 3. Assume the device is mounted and measured on a ceramic substrate15x15x0.6mm ELECTRICAL CHARACTERISTICS (Ta= 25°C, unless otherwise stated) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Collector-Base Breakdown Voltage BVCBO IC= -100µA -20 -65 V Collector-Emitter Breakdown Voltage BVCEO IC= -10mA (Note) -20 -55 V Emitter-Base Breakdown Voltage BVEBO IE= -100µA -5 -8.8 V Collector Cut-Off Current ICBO VCB= -15V -100 nA Emitter Cut-Off Current IEBO VEB= -4V -100 nA Collector Emitter Cut-Off Current ICES VCES= -15V -100 nA IC= -100mA, IB= -10mA (Note) -16 -40 mV IC= -1A, IB= -20mA (Note) -130 -200 mV Collector-Emitter Saturation Voltage VCE(SAT) IC= -1.5A, IB= -50mA (Note) -145 -220 mV Base-Emitter Saturation Voltage VBE(SAT) IC= -1.5A, IB= -50mA (Note) -0.87 -1.0 V Base-Emitter Turn-On Voltage VBE(ON) VCE= -2V, IC= -2A (Note) -0.81 -1.0 V VCE= -2V, IC= -10mA (Note) 300 475 VCE= -2V, IC= -100mA (Note) 300 450 VCE= -2V, IC= -2A, (Note) 150 230 VCE= -2V, IC= -4A, (Note) 35 70 DC Current Gain hFE VCE= -2V, IC= -6A, (Note) 15 30 Transition Frequency fT VCE =-10V , IC= -50mA, f=100MHz 150 180 MHZ Output Capacitance COB VCB= -10V, f=1MHz 21 30 pF Turn-On Time t(ON) 40 ns Turn-Off Time t(OFF) VCC= -10V, IC= -1A IB1= IB2= -20mA 670 ns Note: Measured under pulsed conditions. Pulse width=300µs. Duty cycle≤2% |
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