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4126DL-T92-R Scheda tecnica(PDF) 2 Page - Unisonic Technologies

Il numero della parte 4126DL-T92-R
Spiegazioni elettronici  MIDDLING VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
PDF  3 Pages
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Produttore elettronici  UTC [Unisonic Technologies]
Homepage  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

4126DL-T92-R Scheda tecnica(HTML) 2 Page - Unisonic Technologies

  4126DL-T92-R Datasheet HTML 1Page - Unisonic Technologies 4126DL-T92-R Datasheet HTML 2Page - Unisonic Technologies 4126DL-T92-R Datasheet HTML 3Page - Unisonic Technologies  
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4126D
NPN EPITAXIAL SILICON TRANSISTOR
UNISONICTECHNOLOGIESCO.,LTD
2 of 3
www.unisonic.com.tw
QW-R204-030.B
ABSOLUTE MAXIMUM RATINGS (TC=25°C)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Emitter Voltage (VBE=0)
VCES
350
V
Collector-Emitter Voltage (IB=0)
VCEO
200
V
Emitter-Base Voltage
VEBO
7
V
Collector Current
DC
IC
3
A
Pulse (Note 2)
ICP
6
A
Base Current
DC
IB
1
A
Pulse (Note 2)
IBP
2
A
Total Dissipation
TO-92
PC
1.5
W
TO-126/TO-251
40
W
Junction Temperature
TJ
150
°C
Storage Temperature Range
TSTG
-55~+150
°C
Notes: 1. Absolute maximum ratings are stress ratings only and functional device operation is not implied. Absolute
maximum ratings are those values beyond which the device could be permanently damaged.
2. Pulse Test: Pulse Width=5.0ms, Duty Cycle<10%.
THERMAL CHARACTERISTICS
PARAMETER
SYMBOL
RATINGS
UNIT
Junction to Case
TO-92
θJC
80
°C/W
TO-126/TO-251
3.125
°C/W
ELECTRICAL CHARACTERISTICS
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
Collector-Base Breakdown Voltage
BVCBO
IC=1mA, IB=0
350
V
Collector-Emitter Breakdown Voltage
BVCEO
IC=10mA, IB=0
200
V
Emitter-Base Breakdown Voltage
BVEBO
IE=1mA, IC=0
7
V
Collector Cut-Off Current
ICBO
VCB=350V, IE=0
100
µA
Collector-Emitter Cut-Off Current
ICEO
VCE=200V, IB=0
50
µA
Emitter Cut-Off Current
IEBO
VEB=7V, IC=0
10
μA
Collector-Emitter Saturation Voltage
VCE(SAT)1
IC=1A, IB=0.2A
0.8
V
VCE(SAT)2
IC=3A, IB=0.6A
1.6
V
Base-Emitter Saturation Voltage
VBE(SAT)
IC=2A, IB=0.5A
1.5
V
DC Current Gain
hFE1
IC=0.5A,VCE=5V
8
50
hFE2
IC=2A,VCE=5V
7
Transition Frequency
fT
IC=0.5A, VCE=10V
4
MHz
Storage Time
tS
VCC=24V, IC=0.5A, IB1=-IB2=0.1A
4
μs
Fall Time
tF
0.7
μs



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