DTA113T

PNP SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

2 of 3

www.unisonic.com.tw

QW-R206-091.D



PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Base Voltage

-50

V

Collector-Emitter Voltage

-50

V

Emitter-Base Voltage

-6

V

Collector Current

-100

mA

Peak Collector Current

-200

mA

Collector Power Dissipation

150

mW

Junction Temperature

150

°C

Storage Temperature

-55~+150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.



PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNIT

Collector-Emitter Breakdown Voltage

-50

V

Collector-Emitter Saturation Voltage

-0.3

V

Collector Cut-off Current

-0.1

μA

DC Current Gain

100

Input Resistance

0.7

1.0

1.3

kΩ

Current Gain Bandwidth Product

150

MHz