DTA115TG-AE3-R datasheet(2/3 Pages) UTC

2 / 3 page

DTA115T

PNP SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

2 of 3

www.unisonic.com.tw

QW-R206-062.C



ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified)

PARAMETER

SYMBOL

RATING

UNIT

Collector-Base Voltage

VCBO

-50

Collector-Emitter Voltage

VCEO

-50

Emitter-Base Voltage

VEBO

-5

Collector Current

-100

Collector Power Dissipation

200

Junction Temperature

+150

℃

Storage Temperature

TSTG

-55~+150

℃

Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.



ELECTRICAL SPECIFICATIONS (TA=25°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP MAX UNIT

Collector-Base Breakdown Voltage

BVCBO

IC=-50μA

-50

Collector-Emitter Breakdown Voltage

BVCEO

IC=-1mA

-50

Emitter-Base Breakdown Voltage

BVEBO

IE=-50μA

-5

Collector-Emitter Saturation Voltage

VCE(SAT) IC=-1mA, IB=-0.1mA

-0.3

Collector Cutoff Current

ICBO

VCB=-50V

-0.5

μA

Emitter Cutoff Current

IEBO

VEB=-4V

-0.5

μA

DC Current Gain

hFE

VCE=-5V, IC=-1mA

100

250

600

Input Resistance

100

130

kΩ

Transition Frequency

VCE=-10V, IE=5mA,f=100MHz (Note)

250

MHz

Note: Transition frequency of the device

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