DTA143T

PNP SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

2 of 3

www.unisonic.com.tw

QW-R206-058.F



PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Base Voltage

-50

V

Collector-Emitter Voltage

-50

V

Emitter-Base Voltage

-5

V

Collector Current

-100

mA

SOT-23/SOT-323

200

mW

Collector Power Dissipation

SOT-523

150

mW

Junction Temperature

+150

C

Storage Temperature

-40~+150

C

Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.



PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP MAX UNIT

Collector-base breakdown voltage

-50

V

Collector-emitter breakdown voltage

-50

V

Emitter-base breakdown voltage

-5

V

Collector cutoff current

-0.5

μA

Emitter cutoff current

-0.5

μA

Collector-emitter saturation voltage

-0.3

V

DC Current Gain

100

250

600

Input resistance

3.29

4.7

6.11

kΩ

Transition frequency

250

MHz

Note: Transition frequency of the device