DTA144T

PNP SILICON TRANSISITOR

UNISONICTECHNOLOGIESCO.,LTD

2 of 3

www.unisonic.com.tw

QW-R206-065.E



PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Base Voltage

-50

V

Collector-Emitter Voltage

-50

V

Emitter-Base Voltage

-5

V

Collector Current

-100

mA

Collector Power Dissipation

200

mW

Junction Temperature

150

°С

Storage Temperature

-55~+150

°С

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.



PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP MAX UNIT

Collector-Base Breakdown Voltage

-50

V

Collector-Emitter Breakdown Voltage

-50

V

Emitter-Base Breakdown Voltage

-5

V

Collector Cutoff Current

-0.5

μA

Emitter Cutoff Current

-0.5

μA

Collector-Emitter Saturation Voltage

-0.3

V

DC Current Transfer Ratio

100

250

600

Transition Frequency (Note)

250

MHz

Input Resistance

R1

32.9

47

61.1

kΩ

Note: Transition frequency of the device