PUMT1G-AL6-R datasheet(2/3 Pages) UTC

2 / 3 page

PUMT1

PNP SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

2 of 3

www.unisonic.com.tw

QW-R218-001.E

ABSOLUTE MAXIMUM RATINGS (TA=25°C)

PARAMETER

SYMBOL

RATING

UNIT

Collector-Base Voltage

VCBO

-50

Collector-Emitter Voltage

VCEO

-40

Emitter-Base Voltage

VEBO

-5

Collector Current (DC)

-100

Peak Collector Current

ICM

-200

Peak Base Current

IBM

-200

Collector Power Dissipation

200

Junction Temperature

150

°C

Storage Temperature

TSTG

-55 ~ +150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

ELECTRICAL CHARACTERISTICS (TA=25°C)

PARAMETER

SYMBOL

CONDITION

MIN

TYP

MAX

UNIT

Collector Cut-Off Current

ICBO

IE=0, VCB=-30V

-100

IE=0, VCB=-30V, TJ=150°C

-10

μA

Emitter Cut-Off Current

IEBO

VEB=-4V, IC=0

-100

DC Current Gain

hFE

IC=-1mA, VCE=-6V

120

Collector-Emitter Saturation Voltage

VCE(SAT)

IC=-50mA, IB=-5mA (Note 1)

-200

Collector Capacitance

IE=IE=0, VCB=-12V, f=1MHz

2.2

Transition Frequency

IC=-2mA, VCE=-12V, f=100MHz

100

MHz

Note: 1. Pulse test: Pulse Width≤300μs, Duty Cycle≤2.0%

2. The following characteristics apply to both TR1 and TR2.

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