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TF218G-X-AN3-R Scheda tecnica(PDF) 2 Page - Unisonic Technologies

Il numero della parte TF218G-X-AN3-R
Spiegazioni elettronici  N-CHANNEL JUNCTION FIELD EFFECT TRANSISTOR
PDF  4 Pages
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Produttore elettronici  UTC [Unisonic Technologies]
Homepage  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

TF218G-X-AN3-R Scheda tecnica(HTML) 2 Page - Unisonic Technologies

  TF218G-X-AN3-R Datasheet HTML 1Page - Unisonic Technologies TF218G-X-AN3-R Datasheet HTML 2Page - Unisonic Technologies TF218G-X-AN3-R Datasheet HTML 3Page - Unisonic Technologies TF218G-X-AN3-R Datasheet HTML 4Page - Unisonic Technologies  
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TF218
JFET
UNISONICTECHNOLOGIESCO.,LTD
2 of 4
www.unisonic.com.tw
QW-R206-093.F
ABSOLUTE MAXIMUM RATING (TA=25°С, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Gate to Drain Voltage
VGDO
-20
V
Gate Current
IG
10
mA
Drain Current
ID
1
mA
Power Dissipation
PD
100
mW
Junction Temperature
TJ
150
°С
Storage Temperature
TSTG
-55~+150
°С
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (TA=25°С, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP MAX UNIT
G-D Breakdown Voltage
BVGDO
IG=-100uA
-20
V
Gate Off Voltage
VGS(OFF)
VDS=5.0V, ID=1uA
-0.2
-0.6
-1.0
V
Drain Current
IDSS
VDS=2.0V, VGS=0
100
350
μA
Forward Transfer Admittance
|YFS|
VDS=2.0V, VGS=0, f=1KHz
0.65
1.0
ms
Input Capacitance
CISS
VDS=5.0V, VGS=0, f=1MHz
3.5
pF
Reverse Transfer Capacitance
CRSS
VDS=5.0V, VGS=0, f=1MHz
0.65
pF
Voltage Gain
GV
VIN=10mV, f=1KHz
-3.0
dB
Reduced Voltage Characteristic
△
GVV
VIN=10mV, f=1KHz VCC=4.51.5V
-1.2
-3.5
dB
Frequency Characteristic
△
GVf
f=1KHz~110Hz
-1.0
dB
Input Resistance
ZIN
f=1KHz
25
MΩ
Output Resistance
ZO
f=1KHz
1000
Ω
Total Harmonic Distortion
THD
VIN=30mV, f=1KHz
1.2
%
Output Noise Voltage
VNO
VIN=0, A Curve
-110
dB
CLASSIFICATION OF IDSS
RANK
E3
E4
E5
RANGE
100-170
140-240
210-350



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