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UP672G-AL6-R Scheda tecnica(PDF) 2 Page - Unisonic Technologies

Il numero della parte UP672G-AL6-R
Spiegazioni elettronici  N-CHANNEL MOSFET ARRAY FOR SWITCHING
PDF  4 Pages
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Produttore elettronici  UTC [Unisonic Technologies]
Homepage  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

UP672G-AL6-R Scheda tecnica(HTML) 2 Page - Unisonic Technologies

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UP672
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
2 of 3
www.unisonic.com.tw
QW-R502-504.B
ABSOLUTE MAXIMUM RATINGS (TA=25°C)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
50
V
Gate-Source Voltage
VGSS
±7.0
V
Drain Current
Continuous
ID
100
mA
Pulsed (Note 2)
IDM
200
mA
Total Power Dissipation
PD
200
mW
Channel Temperature
TCH
150
°C
Storage Temperature Range
TSTG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. PW ≤ 10ms, Duty Cycle ≤ 50%
ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
ID=250µA, VGS=0V
50
V
Drain-Source Leakage Current
IDSS
VDS=50V, VGS=0V
10
µA
Gate-Source Leakage Current
Forward
IGSS
VDS=0V ,VGS=7.0V
5.0
µA
Reverse
VDS=0V ,VGS=-7.0V
-5.0
µA
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(OFF)
VDS=3.0V, ID=1.0µA
0.7
1.0
1.5
V
Drain-Source On-State Resistance
RDS(ON)1
VGS=2.5V, ID=10mA
3
40
Ω
RDS(ON)2
VGS=4.0V, ID=10mA
2.3
20
Ω
Forward Transconductance
|yFS|
VDS=3.V, ID=10mA
20
mS
DYNAMIC PARAMETERS
Input Capacitance
CISS
VDS=3.0V, VGS=0V, f=1.0MHz
27
pF
Output Capacitance
COSS
17
pF
Reverse Transfer Capacitance
CRSS
11
pF
SWITCHING PARAMETERS
Turn-ON Delay Time
tD(ON)
VDD=3V,ID=20mA, VGS(ON)=3V,
RG=10Ω, RL=120Ω
30
ns
Turn-ON Rise Time
tR
18
ns
Turn-OFF Delay Time
tD(OFF)
42
ns
Turn-OFF Fall Time
tF
12.5
ns



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