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UT20N03G-TN3-R Scheda tecnica(PDF) 3 Page - Unisonic Technologies |
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UT20N03G-TN3-R Scheda tecnica(HTML) 3 Page - Unisonic Technologies |
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3 / 6 page ![]() UT20N03 Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 3 of 6 www.unisonic.com.tw QW-R502-139.D ABSOLUTE MAXIMUM RATINGS (TJ=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 30 V Gate-Source Voltage VGSS ±20 V Continuous Drain Current ID 20 A Pulsed Drain Current (Note 1) IDM 120 Avalanche Energy Single Pulsed (Note 2) EAS 15 mJ Repetitive (Note 1) EAR 6 Peak Diode Recovery (Note 3) dv/dt 6 KV/μs Power Dissipation TO-252 PD 60 W DFN-8(5×6) 21 W Junction Temperature TJ +175 °C Storage Temperature TSTG -55 ~ +175 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL DATA PARAMETER SYMBOL MIN TYP MAX UNIT Junction to Ambient TO-252 θJA 100 °C/W DFN-8(5×6) 46 Junction to Case TO-252 θJC 1.7 2.5 °C/W DFN-8(5×6) 6 |
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