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UT4800G-S08-R Scheda tecnica(PDF) 3 Page - Unisonic Technologies |
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UT4800G-S08-R Scheda tecnica(HTML) 3 Page - Unisonic Technologies |
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3 / 7 page ![]() UT4800 Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 3 of 7 www.unisonic.com.tw QW-R105-001.C ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 30 V Gate-Source Voltage VGSS ±25 V Continuous Drain Current (Note 1) ID 6.5 A Pulsed Drain Current (Note 1) IDM 40 A Power Dissipation PD 1.3 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL DATA PARAMETER SYMBOL MIN TYP MAX UNIT Junction-to-Ambient θJA 70 95 °C/W ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS VGS =0 V, ID =250 µA 30 V Drain-Source Leakage Current IDSS VDS =24 V, VGS =0 V 1 µA Gate-Source Leakage Current IGSS VDS =0 V, VGS = ±20V ±100 nA ON CHARACTERISTICS Gate-Threshold Voltage VGS(TH) VDS =VGS, ID =250 µA 0.8 1.8 V Static Drain-Source On-Resistance RDS(ON) VGS =10 V, ID =9A 15.5 18.5 mΩ VGS =4.5 V, ID =7A 23 30 mΩ SWITCHING PARAMETERS Turn-ON Delay Time tD(ON) VGS=10V,VDS=15V, RL=15Ω, RGEN=6Ω 7 15 ns Turn-ON Rise Time tR 12 20 ns Turn-OFF Delay Time tD(OFF) 32 50 ns Turn-OFF Fall-Time tF 14 25 ns Total Gate Charge QG VDS =15V, VGS =5.0V, ID =9A 8.7 13 nC Gate-Source Charge QGS 1.5 nC Gate-Drain Charge QGD 3.5 nC DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Diode Forward Voltage VSD VGS=0V, IS=2.3A 0.75 1.2 V Maximum Body-Diode Continuous Current IS 2.3 A Body Diode Reverse Recovery Time tRR IF=2.3A, dI/dt=100A/μs 30 60 ns Notes: 1. Repetitive Rating : Pulse width limited by TJ 2. Pulse Test: Pulse width ≤ 300μs, Duty cycle 2% max. |
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