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UF3205G-TQ2-R Scheda tecnica(PDF) 2 Page - Unisonic Technologies |
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UF3205G-TQ2-R Scheda tecnica(HTML) 2 Page - Unisonic Technologies |
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2 / 6 page ![]() UF3205 Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 2 of 6 www.unisonic.com.tw QW-R502-304.D ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATINGS UNIT Gate-Source Voltage VGSS ±20 V Drain-Source Voltage VDSS 55 V Continuous (VGS=10V) ID 110 Drain Current Pulsed (Note 2) IDM 390 A Avalanche Current (Note 2) IAR 62 A Repetitive(Note 2) EAR 20 Avalanche Energy Single Pulsed(Note 3) EAS 265 mJ Power Dissipation (TC=25°C) PD 156 W Junction Temperature TJ +175 °C Storage Temperature TSTG -55 ~ +175 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Pulse width limited by TJ(MAX) 3. TJ=25°C, L=0.138mH, RG=25Ω, IAS=62A THERMAL DATA PARAMETER SYMBOL MAX UNIT Junction to Ambient θJA 62.5 °C/W TO-220 0.8 Junction to Case TO-263 θJC 0.7 °C/W |
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