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UP9971G-S08-R Scheda tecnica(PDF) 3 Page - Unisonic Technologies

Il numero della parte UP9971G-S08-R
Spiegazioni elettronici  N-CHANNEL MOSFET FOR HIGH SPEED SWITCHING
PDF  4 Pages
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Produttore elettronici  UTC [Unisonic Technologies]
Homepage  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

UP9971G-S08-R Scheda tecnica(HTML) 3 Page - Unisonic Technologies

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UP9971
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
3 of 4
www.unisonic.com.tw
QW-R502-294.D
ABSOLUTE MAXIMUM RATINGS (TA=25℃, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
60
V
Gate-Source Voltage
VGSS
±25
V
Continuous Drain Current (VGS=10V)
ID
5
A
SOP-8
30
A
Pulsed Drain Current (Note 2,3)
DIP-8
IDM
20
A
Power Dissipation
PD
2
W
Junction Temperature
TJ
+150
°C
Operating Temperature
TOPR
-55 ~ +150
C
Storage Temperature
TSTG
-55 ~ +150
°C
Note:1.
2.
3.
Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
Pulse width limited by TJ(MAX)
Pulse width≦300µs, Duty cycle≦2%
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
UNIT
Junction to Ambient
θJA
62.5
°C/W
ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS=0V, ID=250µA
60
V
Zero Gate Voltage Drain Current
IDSS
VDS=60 V, VGS=0V
1
µA
Gate-Body Leakage Current
IGSS
VGS=±25V
±100
nA
Breakdown Voltage Temperature Coefficient ∆BVDSS/∆TJ Reference to 25°C, ID=1mA
0.06
V/°C
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=250µA
1.5
3
V
VGS=10V, ID=5A
60
Static Drain-Source On-Resistance (Note)
RDS(ON)
VGS=4.5V, ID=2.5A
72
mΩ
SOP-8
16
S
Forward Transconductance
(Note)
DIP-8
gFS
VDS=10V, ID=5 A
7
S
DYNAMIC PARAMETERS
SOP-8
1658
pF
Input Capacitance
DIP-8
CISS
1560
pF
Output Capacitance
COSS
156
pF
SOP-8
109
pF
Reverse Transfer Capacitance
DIP-8
CRSS
VDS=25V, VGS=0V,
f =1.0MHz
110
pF
SWITCHING PARAMETERS
Total Gate Charge (Note)
QG
32.5
nC
Gate Source Charge
QGS
4.9
nC
Gate Drain Charge
QGD
VDS=48V, VGS=10V, ID=5A
8.8
nC
Turn-ON Delay Time (Note)
tD(ON)
9.6
ns
Turn-ON Rise Time
tR
10
ns
Turn-OFF Delay Time
tD(OFF)
30
ns
Turn-OFF Fall-Time
tF
VGS=10V, VDS=30V, RD=6Ω,
RG=3.3Ω, ID=5 A
5.5
ns
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Diode Forward Voltage (Note)
VSD
IS =1.6 A,VGS =0 V
1.2
V
Body Diode Reverse Recovery Time
trr
29.2
ns
Body Diode Reverse Recovery Charge
QRR
IS=5A, VGS=0V,
di/dt=100A/µs
48
nC
Note: Pulse width≦300µs, Duty cycle≦2%



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