W949D6KB datasheet(39/60 Pages) WINBOND

39 / 60 page

W949D6KB / W949D2KB

Publication Release Date: Dec. 11, 2014

Revision: A01-002

- 39 -

8.6.7

Random Write Cycles

Full-speed random write accesses within a page or pages can be performed as shown in below figure.

BA,Col n

BA,Col b

WRITE

NOP

Command

Address

1) Dl b etc. = Data in to column b, etc.;

b', etc. = the next Data In following Dl b, etc. according to the programmed burst order

2) Programmed burst length = 2, 4, 8 or 16 in cases shown. If burst of 4, 8 or 16, burst would be truncated

3) Each WRITE command may be to any active bank and may be to the same or different devices.

WRITE

= Don't Care

DQS

BA,Col a

BA,Col x

BA,Col n

BA,Col g

DI b

DI b'

DI x

DI x'

DI n

DI n'

DI a

DI a'

tDQSSmax

8.6.8

Write to Read

Data for any Write burst may be followed by a subsequent READ command.

8.6.9

Non-Interrupting Write to Read

To follow a Write without truncating the write burst, tWTR should be met as shown in the figure below.

BA,Col b

WRITE

NOP

Command

Address

1) Dl b = Data in to column b

3 subsequent elements of Data In are applied in the programmed order following DI b.

2) A non-interrupted burst of 4 is shown.

3) tWTR is referenced from the positive clock edge after the last Data In pair.

4) A10 is LOW with the WRITE command (Auto Precharge is disabled)

5) The READ and WRITE commands are to the same device but not necessarily to the same bank.

NOP

READ

= Don't Care

DQS

BA,Col n

tWTR

CL=3

DI b

NOP

tDQSSmax

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