2N80G-TND-R datasheet(4/7 Pages) UTC

4 / 7 page

2N80

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

4 of 7

www.unisonic.com.tw

QW-R502-480.E



ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

BVDSS

ID=250µA, VGS=0V

800

Breakdown Voltage Temperature Coefficient

△

BVDSS △

/TJ

Reference to 25°C,

ID=250µA

0.9

V/°C

Drain-Source Leakage Current

IDSS

VDS=800V, VGS=0V

µA

VDS=640V, TC=125°C

100

Gate- Source Leakage Current

Forward

IGSS

VGS=+30V, VDS=0V

+100

Reverse

VGS=-30V, VDS=0V

-100

ON CHARACTERISTICS

Gate Threshold Voltage

VGS(TH)

VDS=VGS, ID=250µA

3.0

5.0

Static Drain-Source On-State Resistance

RDS(ON)

VGS=10V, ID=1.2A

4.8

6.3

Ω

Forward Transconductance (Note 1)

gFS

VDS=50V, ID=1.2A

2.65

DYNAMIC PARAMETERS

Input Capacitance

CISS

VGS=0V, VDS=25V,

f=1.0MHz

550

650

Output Capacitance

COSS

Reverse Transfer Capacitance

CRSS

SWITCHING PARAMETERS

Turn-ON Delay Time

tD(ON)

VGS=10V VDD=30V,

ID=0.5A, RG=25Ω

(Note 1,2)

Rise Time

Turn-OFF Delay Time

tD(OFF)

Fall-Time

Total Gate Charge

VGS=10V, VDS=50V,

ID=1.3A, IG=100µA

(Note 1,2)

Gate to Source Charge

QGS

Gate to Drain Charge

QGD

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Maximum Continuous Drain-Source Diode

Forward Current

2.4

Maximum Pulsed Drain-Source Diode

Forward Current

ISM

9.6

Drain-Source Diode Forward Voltage

VSD

IS=2.4A, VGS=0V

1.4

Reverse Recovery Time (Note 1)

tRR

IS=2.4A, VGS=0V,

dIF/dt=100A/µs

480

Reverse Recovery Charge (Note 1)

QRR

2.0

µC

Notes: 1. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2%

2. Essentially independent of operating temperature

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