3N90

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 6

www.unisonic.com.tw

QW-R502-290.D



PARAMETER

SYMBOL

RATINGS

UNIT

900

V

900

V

Gate-Source Voltage

±30

V

30(MIN)

V

Continuous Drain Current

3

A

Pulsed Drain Current

10

A

Single Pulse Avalanche Energy (Note 3)

180

mJ

Peak Diode Recovery dv/dt (Note 4)

dv/dt

4.5

V/ns

Power Dissipation

TO-220/TO-263

TO-230

90

W

TO-220F/TO-220F1

25

TO-220F2

26

Junction Temperature

+150

°C

Storage Temperature

-55 ~ +150

°C

Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.



THERMAL DATA

PARAMETER

SYMBOL

RATING

UNIT

Junction to Ambient

62.5

°C/W

Junction to Case

TO-220/ TO-263

TO-230

1.38

°C/W

TO-220F/TO-220F1

5

TO-220F2

4.9