4N90

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

3 of 6

www.unisonic.com.tw

QW-R502-479.F



PARAMETER

SYMBOL

RATINGS

UNIT

Drain to Source Voltage

900

V

Gate to Source Voltage

±30

V

Avalanche Current (Note 2)

4

A

Continuous Drain Current

Continuous

4

A

Pulsed (Note 2)

16

A

Avalanche Energy

Single Pulsed (Note 3)

570

mJ

Repetitive (Note 2)

14

mJ

Peak Diode Recovery dv/dt (Note 4)

dv/dt

4.5

V/ns

Power Dissipation

TO-220

140

W

TO-220F/TO-220F1

TO-220F3

38

TO-220F2

40

TO-251/TO-252

54

TO-3PN

208

Derate above 25°C

TO-220

1.12

W/°C

TO-220F/TO-220F1

TO-220F3

0.304

TO-220F2

0.322

TO-251/TO-252

0.43

TO-3PN

1.66

Operating Junction Temperature

+150

°C

Storage Temperature

-55 ~ +150

°C

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Repetitive Rating: Pulse width limited by maximum junction temperature



THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

Junction to Ambient

TO-220/TO-220F

TO-220F1/TO-220F2

TO-220F3

62.5

°C/W

TO-251/TO-252

110

TO-3PN

40

Junction to Case

TO-220

0.89

°C/W

TO-220F/TO-22F1

TO-22F3

3.25

TO-220F2

3.1

TO-251/TO-252

2.3

TO-3PN

0.6