8N40G-TN3-R datasheet(3/6 Pages) UTC

3 / 6 page

8N40

Preliminary

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

3 of 6

www.unisonic.com.tw

QW-R502-577.c



ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

BVDSS

ID=250µA, VGS=0V

400

Breakdown Voltage Temperature Coefficient △BVDSS △

/TJ Reference to 25°C, ID=250µA

0.4

V/°C

Drain-Source Leakage Current

IDSS

VDS=400V, VGS=0V

µA

Gate- Source Leakage Current

Forward

IGSS

VGS=+30V, VDS=0V

+100 nA

Reverse

VGS=-30V, VDS=0V

-100 nA

ON CHARACTERISTICS

Gate Threshold Voltage

VGS(TH)

VDS=VGS, ID=250µA

2.0

4.0

Static Drain-Source On-State Resistance

RDS(ON)

VGS=10V, ID=4A

0.68 0.82

Ω

DYNAMIC PARAMETERS

Input Capacitance

CISS

VGS=0V, VDS=25V, f=1.0MHz

1600 pF

Output Capacitance

COSS

450

Reverse Transfer Capacitance

CRSS

150

SWITCHING PARAMETERS

Total Gate Charge

VGS=10V, VDS=320V, ID=8A

(Note 1, 2)

Gate to Source Charge

QGS

Gate to Drain Charge

QGD

Turn-ON Delay Time

tD(ON)

VDD=200V, ID=8A, RG=25Ω

(Note 1, 2)

Rise Time

Turn-OFF Delay Time

tD(OFF)

Fall-Time

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Maximum Body-Diode Continuous Current

Maximum Body-Diode Pulsed Current

ISM

Drain-Source Diode Forward Voltage

VSD

IS=8A, VGS=0V

1.9

Notes: 1. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2%

2. Essentially independent of operating temperature

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