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10N60L-TQ2-R Scheda tecnica(PDF) 1 Page - Unisonic Technologies |
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10N60L-TQ2-R Scheda tecnica(HTML) 1 Page - Unisonic Technologies |
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1 / 9 page ![]() UNISONIC TECHNOLOGIES CO., LTD 10N60 Power MOSFET www.unisonic.com.tw 1 of 7 Copyright © 2014 Unisonic Technologies Co., Ltd QW-R502-119.O 10A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 10N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits. FEATURES * RDS(ON) < 0.75Ω@VGS =10V * Fast switching * 100% avalanche tested * Improved dv/dt capability SYMBOL |
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