UT60T03G-TF3-R datasheet(4/7 Pages) UTC

4 / 7 page

UT60T03

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

4 of 7

www.unisonic.com.tw

QW-R502-183.D



ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise noted)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

BVDSS

VGS=0 V, ID=250µA

Drain-Source Leakage Current

IDSS

VDS=30V, VGS=0V

µA

Gate-Body Leakage Current

IGSS

VGS=±20 V

±100

Breakdown Voltage Temperature Coefficient ∆BVDSS/∆TJ Reference to 25°C, ID=1mA

0.026

V/°C

ON CHARACTERISTICS

Gate Threshold Voltage

VGS(TH)

VDS=VGS, ID=250µA

Static Drain-Source On-Resistance(Note 1)

RDS(ON)

VGS=10V, ID=20A

mΩ

VGS=4.5V, ID=15A

DYNAMIC PARAMETERS

Input Capacitance

CISS

VDS=25V, VGS=0V,

f=1.0MHz

1135

Output Capacitance

COSS

200

Reverse Transfer Capacitance

CRSS

135

SWITCHING PARAMETERS

Total Gate Charge

VDS=20V, VGS=4.5V,

ID=20A (Note 1)

11.6

Gate Source Charge

QGS

3.9

Gate Drain Charge

QGD

Turn-ON Delay Time

tD(ON)

VGS=10V, VDS=15V,

RD=0.75Ω, ID=20A,

RG=3.3Ω (Note 1)

8.8

Turn-ON Rise Time

57.5

Turn-OFF Delay Time

tD(OFF)

18.5

Turn-OFF Fall-Time

6.4

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Forward On Voltage (Note 1)

VSD

IS=45A, VGS=0V

1.3

Reverse Recovery Time

tRR

IS=20A, VGS=0V,

dI/dt=100A/μs

23.3

Reverse Recovery Charge

QRR

Note: 1.Pulse width ≤ 300us , duty cycle ≤ 2%.

2. Essentially independent of operating temperature

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