UT60T03

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

3 of 7

www.unisonic.com.tw

QW-R502-183.D



PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

30

V

Gate-Source Voltage

±20

V

Continuous Drain Current

45

A

Pulsed Drain Current (Note 2)

120

A

TO-220F

56

W

TO-252

44

TO-263

54

DFN-8(5×6)

21

Junction Temperature

+150

°C

Strong Temperature

-55 ~ +175

°C

Note:1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2 .Pulse width limited by safe operating area.



THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

Junction to Ambient

TO-220F

62.5

°C/W

TO-252

110

TO-263

62

DFN-8(5×6)

46

Junction to Case

TO-220F

2.66

°C/W

TO-252

3.4

TO-263

1.24

DFN-8(5×6)

6