UT5003Z

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 7

www.unisonic.com.tw

QW-R502-490.B



N-Channel:

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

30

V

Gate-Source Voltage

±20

V

Continuous Drain Current (Note3)

7

A

Pulsed Drain Current (Note3)

20

A

Power Dissipation

2

W

Junction Temperature

+150

°C

Storage Temperature

-55 ~ +150

°C

P-Channel:

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

-30

V

Gate-Source Voltage

±20

V

Continuous Drain Current (Note3)

-5

A

Pulsed Drain Current (Note3)

-20

A

Power Dissipation

2

W

Junction Temperature

+150

°C

Storage Temperature

-55 ~ +150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.



THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

Junction to Ambient (Note3)

62.5

°C/W



N-CHANNEL

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

30

V

Drain-Source Leakage Current

1

uA

Gate-Source Leakage Current

±5

uA

ON CHARACTERISTICS

Gate Threshold Voltage

1

1.5

2.5

V

Drain-Source On-State Resistance (Note2)

20.5

27.5

mΩ

30

40

mΩ

DYNAMIC CHARACTERISTICS

Input Capacitance

680

pF

Output Capacitance

105

pF

Reverse Transfer Capacitance

75

pF

SWITCHING CHARACTERISTICS

Turn-ON Delay Time (Note2)

4.6

7

ns

Turn-ON Rise Time

4

6

ns

Turn-OFF Delay Time

20

30

ns

Turn-OFF Fall Time

5

8

ns

Total Gate Charge (Note2)

14

nC

Gate-Source Charge

1.9

nC

Gate-Drain Charge

3.3

nC

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Drain-Source Diode Forward Voltage(Note2)

1

V

Diode Continuous Forward Current

1.3

A