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UT50N03G-TN3-R Scheda tecnica(PDF) 2 Page - Unisonic Technologies

Il numero della parte UT50N03G-TN3-R
Spiegazioni elettronici  N-CHANNEL ENHANCEMENT MODE MOSFET
PDF  6 Pages
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Produttore elettronici  UTC [Unisonic Technologies]
Homepage  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

UT50N03G-TN3-R Scheda tecnica(HTML) 2 Page - Unisonic Technologies

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UT50N03
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
2 of 6
www.unisonic.com.tw
QW-R502-168.F
ABSOLUTE MAXIMUM RATINGS (TJ = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
30
V
Gate-Source Voltage
VGSS
±20
V
Continuous Drain Current
ID
50
A
Pulsed Drain Current (Note 2)
IDM
180
A
Single Pulsed Avalanche Energy (Note 3)
EAS
45
mJ
Power Dissipation
PD
50
W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature.
3. L = 0.1mH, IAS = 30A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C.
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
UNIT
Junction to Ambient (Note 3)
θJA
71.4
°C/W
Junction to Case
θJC
3.0
°C/W
Note: Surface-mounted on FR4 board using 1 sq in pad, 1 oz Cu



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