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UF830G-TN3-R Scheda tecnica(PDF) 1 Page - Unisonic Technologies |
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UF830G-TN3-R Scheda tecnica(HTML) 1 Page - Unisonic Technologies |
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1 / 6 page ![]() UNISONIC TECHNOLOGIES CO., LTD UF830-F Power MOSFET www.unisonic.com.tw 1 of 6 Copyright © 2015 Unisonic Technologies Co., Ltd QW-R502-A94.B 4.5A, 500V, 1.5Ω, N-CHANNEL POWER MOSFET DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers. FEATURES * RDS(ON) <1.5Ω @ VGS=10V, ID=2.5A * Single Pulse Avalanche Energy Rated * Rugged- SOA is Power Dissipation Limited * Fast Switching Speeds * Linear Transfer Characteristics * High Input Impedance SYMBOL ORDERING INFORMATION Ordering Number Pin Assignment Lead Free Halogen Free Package 1 2 3 Packing UF830L-TA3-T UF830G-TA3-T TO-220 G D S Tube UF830L-TF3-T UF830G-TF3-T TO-220F G D S Tube UF830L-TMS-T UF830G-TMS-T TO-251S G D S Tube UF830L-TN3-R UF830G-TN3-R TO-252 G D S Tape Reel Note: Pin Assignment: G: Gate D: Drain S: Source MARKING |
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