UF830KL-TN3-R datasheet(3/6 Pages) UTC

Il numero della parte	UF830KL-TN3-R

Spiegazioni elettronici	N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR

PDF	6 Pages

Scroll/Zoom	100%

Produttore elettronici	UTC [Unisonic Technologies]

Homepage	http://www.utc-ic.com

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3 / 6 page

UF830K

Preliminary

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

3 of 6

www.unisonic.com.tw

QW-R502-A77.b



INTERNAL PACKAGE INDUCTANCE

PARAMETER

SYMBOL

MIN

TYP MAX UNIT

Internal Drain Inductance

Measured from the contact screw on tab to center of die

3.5

Measured from the drain lead(6mm from package) to center of die

4.5

Internal Source Inductance

Measured from the source lead(6mm from header) to source bond pad

7.5

Remark:

Modified MOSFET symbol showing the internal devices inductances as below.



SOURCE TO DRAIN DIODE SPECIFICATIONS

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX UNIT

Source to Drain Diode Voltage

VSD

TJ=25°C,ISD=4.5A, VGS=0V(Note 1)

1.6

Continuous Source to Drain Current

ISD

(Note 2)

5.5

Pulse Source to Drain Current

ISDM

Reverse Recovery Time

trr

TJ=25°C, ISD=4.5A, dI/dt=100A/μs

180

350

760

Reverse Recovery Charge

QRR

TJ=25°C, ISD=4.5A, dI/dt=100A/μs

0.96

2.2

4.3

μC

Notes: 1. Pulse Test: Pulse width≤300μs, Duty Cycle≤2%.

2. Modified MOSFET symbol showing the integral reverse P-N junction diode as below.

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