4N70K-MT

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

3 of 7

www.unisonic.com.tw

QW-R205-037.C

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PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

700

V

Gate-Source Voltage

±30

V

Continuous

4.4

A

Drain Current

Pulsed (Note 2)

17.6

A

Avalanche Energy

Single Pulsed (Note 3)

180

mJ

TO-220

106

W

TO-220F/TO-220F1

TO-220F2/TO-220F3

36

W

Power Dissipation

TO-251/TO-251S

TO-251S2/TO-251S4

TO-252/TO-252D

49

W

Peak Diode Recovery dv/dt (Note 4)

dv/dt

4.5

V/ns

Junction Temperature

+150

°С

Operating Temperature

-55 ~ +150

°С

Storage Temperature

-55 ~ +150

°С

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Repetitive Rating : Pulse width limited by maximum junction temperature

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THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

TO-220/TO-220F

TO-220F1/TO-220F2

TO-220F3

62.5

°C/W

Junction to Ambient

TO-251/TO-251S

TO-251S2/TO-251S4

TO-252/TO-252D

110

°C/W

TO-220

1.18

°C/W

TO-220F/TO-220F1

TO-220F3

3.47

°C/W

TO-220F2

3.4

°C/W

Junction to Case

TO-251/TO-251S

TO-251S2/TO-251S4

TO-252/TO-252D

2.55

°C/W