7NM65G-TN3-R datasheet(4/7 Pages) UTC

4 / 7 page

7NM65

Preliminary

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

4 of 7

www.unisonic.com.tw

QW-R205-042.b



ELECTRICAL CHARACTERISTICS (TC =25°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

BVDSS

VGS = 0V, ID = 250μA

650

Drain-Source Leakage Current

IDSS

VDS = 650V, VGS = 0V

μA

Forward

VGS = 30V, VDS = 0V

100

Gate- Source Leakage Current

Reverse

IGSS

VGS = -30V, VDS = 0V

-100

ON CHARACTERISTICS

Gate Threshold Voltage

VGS(TH)

VDS = VGS, ID = 250μA

2.5

4.5

Static Drain-Source On-State Resistance

RDS(ON)

VGS = 10V, ID = 3.5A

0.9

Ω

DYNAMIC CHARACTERISTICS

Input Capacitance

CISS

375

Output Capacitance

COSS

238

Reverse Transfer Capacitance

CRSS

VDS=25V, VGS=0V,

f=1.0 MHz

SWITCHING CHARACTERISTICS

Turn-On Delay Time

tD(ON)

Turn-On Rise Time

Turn-Off Delay Time

tD(OFF)

160

Turn-Off Fall Time

VDD =30V, ID =0.5A,

RG =25Ω (Note 1, 2)

Total Gate Charge

Gate-Source Charge

QGS

Gate-Drain Charge

QGD

VDS=50V, ID=1.3A,

VGS=10 V (Note 1, 2)

5.8

DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS

Drain-Source Diode Forward Voltage

VSD

VGS = 0V, IS = 7 A

1.4

Maximum Continuous Drain-Source Diode

Forward Current

Maximum Pulsed Drain-Source Diode

Forward Current

ISM

Notes: 1. Pulse Test: Pulse width≤300μs, Duty cycle≤2%

2. Essentially independent of operating temperature

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