UD4606QG-S08-R datasheet(4/10 Pages) UTC

4 / 10 page

UD4606Q

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

4 of 10

www.unisonic.com.tw

QW-R211-021.B



ELECTRICAL CHARACTERISTICS (TA =25°C, unless otherwise specified)

N-CHANNEL

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

BVDSS

VGS=0V, ID=250uA

Drain-Source Leakage Current

IDSS

VDS=24V, VGS=0V

Gate-Source Leakage Current

IGSS

VDS=0V, VGS=±20V

100

ON CHARACTERISTICS

Gate Threshold Voltage

VGS(TH)

VDS=VGS, ID=250uA

1.9

Drain-Source On-State Resistance

RDS(ON)

VGS=10V, ID=6.9A

22.5

mΩ

VGS=4.5V, ID=5A

34.5

mΩ

DYNAMIC CHARACTERISTICS

Input Capacitance

CISS

VGS=0V,VDS=15V,f=1.0MHz

680

Output Capacitance

COSS

102

Reverse Transfer Capacitance

CRSS

SWITCHING CHARACTERISTICS

Turn-ON Delay Time (Note2)

tD(ON)

VDS=15V, VGS=10V, RG=3Ω,

RL=2.2Ω

4.6

Turn-ON Rise Time

4.1

Turn-OFF Delay Time

tD(OFF)

20.6

Turn-OFF Fall Time

5.2

Total Gate Charge (Note2)

VDS=15V, VGS=10V, ID=6.9A

13.8

Gate-Source Charge

QGS

1.82

Gate-Drain Charge

QGD

3.2

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Drain-Source Diode Forward Voltage(Note2)

VSD

IS=1A, VGS=0V

0.76

Diode Continuous Forward Current (Note3)

Reverse Recovery Time

tRR

IDS=6.9A, dI/dt=100A/μs

16.5

Reverse Recovery Charge

QRR

7.8

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