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UT139E Scheda tecnica(PDF) 2 Page - Unisonic Technologies

Il numero della parte UT139E
Spiegazioni elettronici  TRIAC
PDF  3 Pages
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Produttore elettronici  UTC [Unisonic Technologies]
Homepage  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

UT139E Scheda tecnica(HTML) 2 Page - Unisonic Technologies

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UT139E
TRIAC
UNISONICTECHNOLOGIESCO.,LTD
2 of 3
www.unisonic.com.tw
QW-R220-023.a
ABSOLUTE MAXIMUM RATING
PARAMETER
SYMBOL
RATINGS
UNIT
Repetitive peak off-state voltages
UT139E-6
VDRM
600 (Note 2)
V
UT139E-8
800
V
RMS on-state current full sine wave; Tmb ≤99°C
IT(RMS)
16
A
Non-repetitive peak on-state current
(Full sine wave; TJ = 25°C prior to surge)
t = 20ms
ITSM
140
A
t = 16.7 ms
150
I
2t for fusing
t = 10 ms
I
2t
21
A
2s
Repetitive rate of rise of on-state current
after triggering
ITM=20A; IG=0.2A; dIG /dt=0.2A/μs
T2+ G+
dIT /dt
50
A/μs
T2+ G-
50
A/μs
T2- G-
50
A/μs
T2- G+
10
A/μs
Peak gate voltage
VGM
5
V
Peak gate current
IGM
2
A
Peak gate power
PGM
5
W
Average gate power (over any 20 ms period)
PG(AV)
0.5
W
Junction Temperature
TJ
125
°C
Storage Temperature
TSTG
-40 ~ +150
°C
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac
may switch to the on-state. The rate of rise of current should not exceed 6A/μs.
THERMAL RESISTANCES
PARAMETER
SYMBOL
MIN
TYP
MAX
UNIT
Thermal resistance Junction to Ambient
In Free Air
θJA
60
°C/W
Thermal resistance Junction to mounting
base
Full cycle
θJC
1.2
°C/W
Half cycle
1.7
°C/W
STATIC CHARACTERISTICS (TJ =25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Gate Trigger Current
IGT
VD=12V, IT=0.1A
T2+G+
10
mA
T2+G-
10
T2-G-
10
T2-G+
25
Latching Current
IL
VD=12V, IGT=0.1A
T2+G+
7
40
mA
T2+G-
20
60
T2-G-
8
40
T2-G+
10
60
Holding Current
IH
VD=12V, IGT=0.1A
6
30
mA
On-State Voltage
VT
IT=20A
1.2
1.6
V
Gate Trigger Voltage
VGT
VD=12V, IT=0.1A
0.7
1.5
V
VD=400V, IT=0.1A, TJ=125C
0.25
0.40
V
Off-State Leakage Current
ID
VD=VDRM(max), TJ=125C
0.1
0.5
mA
DYNAMIC CHARACTERISTICS (TJ =25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Critical Rate Of Rise Of
Off-State Voltage
dVD/dt
VDM=67% VDRM(max), TJ=125°C,
Exponential waveform, gate open circuit
100
250
V/μs
Critical Rate Of Change Of
Commutating Voltage
dVcom/dt
VDM=400V, TJ=95°C, IT(RMS)=16A,
dIcom/dt=7.2A/ms, gate open circuit
20
V/μs
Gate Controlled Turn-On
Time
tgt
ITM=20A, VD=VDRM(max), IG=0.1A,
dIG/dt=5A/μs
2
μs



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