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UT138FGL-6-TF3-R Scheda tecnica(PDF) 2 Page - Unisonic Technologies |
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UT138FGL-6-TF3-R Scheda tecnica(HTML) 2 Page - Unisonic Technologies |
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2 / 6 page ![]() UT138FF/FG TRIAC UNISONICTECHNOLOGIESCO.,LTD 2 of 6 www.unisonic.com.tw QW-R401-020.C ABSOLUTE MAXIMUM RATING PARAMETER SYMBOL RATINGS UNIT Repetitive Peak Off-State Voltages UT138FF/FG-5 VDRM 500(Note2) V UT138FF/FG-6 600(Note2) UT138FF/FG-8 800 RMS On-state Current Full sine wave, THS ≤92C IT(RMS) 12 A Non-Repetitive Peak. On-State Current Full sine wave, TJ =125C prior to surge, with reapplied VDRM(MAX) t =20 ms ITSM 90 A t =16.7 ms 100 I 2t For Fusing (t =10 ms) I 2t 40 A 2s Repetitive Rate of Rise of On-state Current after Triggering ITM=12 A, IG=0.2 A, dIG/dt=0.2A/µs T2 + G+ dIT /dt 50 A/µs T2 + G- 50 T2 - G- 50 T2 - G+ 10 Peak Gate Voltage VGM 5 V Peak Gate Current IGM 2 A Peak Gate Power PGM 5 W Average Gate Power (Over any 20ms period) PG(AV) 0.5 W Operating Junction Temperature TJ 125 °C Storage Temperature TSTG -40 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may switch to the on-state. The rate of rise of current should not exceed 15A/µs. THERMAL RESISTANCES PARAMETER SYMBOL MIN TYP MAX UNIT Thermal resistance Junction to Ambient In Free Air θJA 55 °C/W Thermal resistance Junction to mounting base Full cycle θJC 4.0 °C/W Half cycle 5.5 °C/W ISOLATION LIMITING VALUE & CHARACTERISTIC (THS =25C, unless otherwise specified) PARAMETER SYMBOL MIN TYP MAX UNIT Repetitive peak voltage form all three terminals to external heatsink (R.H.≤ 65%,clean and dustfree) VISOL 1500 V Capacitance from MT2 to external heatsink (f =1MHz) CISOL 12 pF STATIC CHARACTERISTICS (TJ=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT UT138FF UT138FG Gate Trigger Current IGT VD =12 V,IT =0.1A T2 + G+ 5 25 50 mA T2 + G- 8 25 50 mA T2 - G- 10 25 50 mA T2 - G+ 22 70 100 mA Latching Current IL VD =12 V,IGT =0.1A T2 + G+ 7 40 60 mA T2 + G- 20 60 90 mA T2 - G- 8 40 60 mA T2 - G+ 10 60 90 mA Holding Current IH VD =12 V,IGT =0.1A 6 30 60 mA On-State Voltage VT IT =15 A 1.4 1.65 V Gate Trigger Voltage VGT VD=12V, IT =0.1A 0.7 1.5 V VD=400V, IT=0.1A, TJ=125°C 0.25 0.4 V Off-State Leakage Current ID VD=VDRM(MAX), TJ =125°C 0.1 0.5 mA |
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