Motore di ricerca datesheet componenti elettronici
  Italian  ▼
ALLDATASHEETIT.COM

X  

Preview PDF HTML

UF830KL-TN3-R Scheda tecnica(PDF) 4 Page - Unisonic Technologies

Il numero della parte UF830KL-TN3-R
Spiegazioni elettronici  N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
PDF  7 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Produttore elettronici  UTC [Unisonic Technologies]
Homepage  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

UF830KL-TN3-R Scheda tecnica(HTML) 4 Page - Unisonic Technologies

  UF830KL-TN3-R Datasheet HTML 1Page - Unisonic Technologies UF830KL-TN3-R Datasheet HTML 2Page - Unisonic Technologies UF830KL-TN3-R Datasheet HTML 3Page - Unisonic Technologies UF830KL-TN3-R Datasheet HTML 4Page - Unisonic Technologies UF830KL-TN3-R Datasheet HTML 5Page - Unisonic Technologies UF830KL-TN3-R Datasheet HTML 6Page - Unisonic Technologies UF830KL-TN3-R Datasheet HTML 7Page - Unisonic Technologies  
Zoom Inzoom in Zoom Outzoom out
 4 / 7 page
background image
UF830K-MT
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
4 of 7
www.unisonic.com.tw
QW-R209-030.D
ELECTRICAL SPECIFICATIONS (TA =25°C, unless otherwise specified.)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
ID=250μA, VGS=0V
500
V
On-State Drain Current (Note 1)
ID(ON)
VDS>ID(ON)×RDS(ON)MAX, VGS=10V
4.5
A
Drain-Source Leakage Current
IDSS
VDS= Rated BVDSS, VGS=0V
25
μA
VDS=0.8×Rated BVDSS
VGS=0V, TJ= 125°C
250
μA
Gate-Source Leakage Current
IGSS
VGS=±30V
±100
nA
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VGS=VDS, ID=250μA
2.0
4.0
V
Static Drain-Source On-State Resistance
RDS(ON)
ID=2.5A, VGS=10V (Note 2)
1.50
Ω
DYNAMIC PARAMETERS
Input Capacitance
CISS
VDS=25V, VGS=0V, f=1.0MHz
420
pF
Output Capacitance
COSS
66
pF
Reverse Transfer Capacitance
CRSS
6.5
pF
SWITCHING PARAMETERS
Turn-On Delay Time
tD(ON)
VDD=30V, ID≈0.5A RGS=25Ω
(Note 2)
48
ns
Turn-On Rise Time
tR
48
ns
Turn-Off Delay Time
tD(OFF)
42
ns
Turn-Off Fall Time
tF
44
ns
Total Gate Charge
QG
VGS=10V, ID=1.3A, VDD=50V
IG=100mA (Note 3)
13.8
nC
Gate-Source Charge
QGS
5.4
nC
Gate-Drain Charge
QGD
6.0
nC
Notes: 1. Pulse Test: Pulse width≤300μs, Duty Cycle≤2%.
2. MOSFET Switching Times are Essentially Independent of Operating Temperature.
3. Gate Charge is Essentially Independent of Operating Temperature.
SOURCE TO DRAIN DIODE SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX UNIT
Source to Drain Diode Voltage
VSD
TJ=25°C,ISD=4.5A, VGS=0V(Note 1)
1.6
V
Continuous Source to Drain Current
ISD
(Note 2)
5.5
A
Pulse Source to Drain Current
ISDM
18
A
Notes: 1. Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 2%.
2. Modified MOSFET symbol showing the integral reverse P-N junction diode as below.



Html Pages

1 2 3 4 5 6 7


Scheda tecnica Scarica

Go To PDF Page


Link URL



Lei ha avuto il aiuto da alldatasheet?  [ DONATE ] 

Di alldatasheet   |   Richest di pubblicita   |   contatti   |   Privacy Policy   |   Collegamento alla scheda tecnica    |   scambio Link   |   Ricerca produttore
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com