MGBR5V45G-SMB-R datasheet(2/3 Pages) UTC

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MGBR5V45

Preliminary

DIODE

UNISONICTECHNOLOGIESCO.,LTD

2 of 3

www.unisonic.com.tw

QW-R204-040.b



ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified)

Single phase, half wave, 60Hz, resistive or inductive load.

For capacitance load, derate current by 20%.

PARAMETER

SYMBOL

RATINGS

UNIT

DC Blocking Voltage

VRM

Working Peak Reverse Voltage

VRWM

Repetitive Peak Reverse Voltage

VRRM

RMS Reverse Voltage

VR(RMS)

Average Rectified Output Current

TC=140°C

Non-Repetitive Peak Forward Surge Current 8.3ms

Single Half Sine-Wave Superimposed on Rated Load

IFSM

Repetitive Peak Avalanche Power (1μs, 25°C)

PARM

5000

Operating Junction Temperature

-65~+150

°C

Storage Temperature

TSTG

-65~+150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.



THERMAL CHARACTERISTICS

PARAMETER

SYMBOL

RATINGS

UNIT

Junction to Ambient

θJA

°C/W



ELECTRICAL CHARACTERISTICS (TA =25°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

Reverse Breakdown Voltage (Note 1)

V(BR)R

IR=0.5mA

Instantaneous Forward Voltage

VFM

IF=5A, TJ=25°C

0.61

IF=5A, TJ=125°C

0.58

Leakage Current (Note 1)

IRM

VR=45V, TJ=25°C

500

μA

VR=45V, TJ=125°C

Total Capacitance

VR=5V, f=1MHz, TJ=25°C

400

Notes: 1. Short duration pulse test used to minimize self-heating effect.

2. Thermal resistance junction to case mounted on heatsink.

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