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SI4830CDY Scheda tecnica(PDF) 2 Page - Vishay Telefunken

Il numero della parte SI4830CDY
Spiegazioni elettronici  Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
PDF  15 Pages
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SI4830CDY Scheda tecnica(HTML) 2 Page - Vishay Telefunken

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Document Number: 68884
S09-2109-Rev. B, 12-Oct-09
Vishay Siliconix
Si4830CDY
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width
≤ 300 µs, duty cycle ≤ 2 %.
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
Typ.a
Max.
Unit
Static
Drain-Source Breakdown Voltage
VDS
VGS = 0 V, ID = 1 mA
Ch-1
30
V
VGS = 0 V, ID = 1 mA
Ch-2
30
VDS Temperature Coefficient
ΔV
DS/TJ
ID = 250 µA
Ch-1
32
mV/°C
VGS(th) Temperature Coefficient
ΔV
GS(th)/TJ
ID = 250 µA
Ch-1
- 6
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 1 mA
Ch-1
1
3
V
VDS = VGS, ID = 1 mA
Ch-2
1
3
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
Ch-1
100
nA
VDS = 0 V, VGS = ± 20 V
Ch-2
100
Zero Gate Voltage Drain Current
IDSS
VDS = 30 V, VGS = 0 V
Ch-1
0.001
mA
VDS = 30 V, VGS = 0 V
Ch-2
0.016
0.10
VDS = 30 V, VGS = 0 V, TJ = 100 °C
Ch-1
0.025
VDS = 30 V, VGS = 0 V, TJ = 100 °C
Ch-2
1.1
10
On-State Drain Currentb
ID(on)
VDS = 5 V, VGS = 10 V
Ch-1
20
A
VDS = 5 V, VGS = 10 V
Ch-2
20
Drain-Source On-State Resistanceb
RDS(on)
VGS = 10 V, ID = 8 A
Ch-1
0.0156
0.020
Ω
VGS = 10 V, ID = 8 A
Ch-2
0.0156
0.020
VGS = 4.5 V, ID = 5 A
Ch-1
0.019
0.025
VGS = 4.5 V, ID = 5 A
Ch-2
0.019
0.025
Forward Transconductanceb
gfs
VDS = 15 V, ID = 8 A
Ch-1
29
S
VDS = 15 V, ID = 8 A
Ch-2
29
Dynamica
Input Capacitance
Ciss
Channel-1
VDS = 15 V, VGS = 0 V, f = 1 MHz
Channel-2
VDS = 15 V, VGS = 0 V, f = 1 MHz
Ch-1
950
pF
Ch-2
950
Output Capacitance
Coss
Ch-1
155
Ch-2
185
Reverse Transfer Capacitance
Crss
Ch-1
65
Ch-2
65
Total Gate Charge
Qg
VDS = 15 V, VGS = 10 V, ID = 8 A
Ch-1
16.5
25
nC
VDS = 15 V, VGS = 10 V, ID = 8 A
Ch-2
16.5
25
Channel-1
VDS = 15 V, VGS = 4.5 V, ID = 8 A
Channel-2
VDS = 15 V, VGS = 4.5 V, ID = 8 A
Ch-1
7.3
11
Ch-2
7.3
11
Gate-Source Charge
Qgs
Ch-1
2.7
Ch-2
2.7
Gate-Drain Charge
Qgd
Ch-1
2.1
Ch-2
2.1
Gate Resistance
Rg
f = 1 MHz
Ch-1
0.2
1.2
2.4
Ω
Ch-2
0.2
1.2
2.4



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