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SIR862DP Scheda tecnica(PDF) 4 Page - Vishay Telefunken

Il numero della parte SIR862DP
Spiegazioni elettronici  N-Channel 25-V (D-S) MOSFET
PDF  7 Pages
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Produttore elettronici  TFUNK [Vishay Telefunken]
Homepage  http://www.vishay.com
Logo TFUNK - Vishay Telefunken

SIR862DP Scheda tecnica(HTML) 4 Page - Vishay Telefunken

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Document Number: 65672
S10-0041-Rev. A, 11-Jan-10
Vishay Siliconix
SiR862DP
New Product
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Source-Drain Diode Forward Voltage
Threshold Voltage
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
SD -Source-to-Drain Voltage (V)
1
0.01
0.001
0.1
10
100
T
J = 150 °C
T
J = 25 °C
- 1.0
- 0.7
- 0.4
- 0.1
0.2
0.5
- 50
- 25
0
25
50
75
100
125
150
T
J - Temperature (°C)
I
D = 250 µA
I
D =5mA
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power
0.000
0.003
0.006
0.009
0.012
0.015
012
3
45
67
8
910
V
GS -Gate-to-Source Voltage (V)
I
D =15A
T
J = 125 °C
T
J = 25 °C
0
40
80
120
160
200
10
1
1
0
0
.
0
0.01
Time (s)
0.1
Safe Operating Area, Junction-to-Ambient
0.01
100
1
100
0.01
0.1
V
DS - Drain-to-Source Voltage (V)
* V
GS > minimum VGS at which RDS(on) is specified
1ms
10 ms
100 ms
0.1
1
10
10
T
A = 25 °C
Single Pulse
1s
DC
10 s
BVDSS
Limited
Limited byRDS(on)*



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