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SIR892DP Scheda tecnica(PDF) 6 Page - Vishay Telefunken |
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SIR892DP Scheda tecnica(HTML) 6 Page - Vishay Telefunken |
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6 / 13 page ![]() www.vishay.com 6 Document Number: 68639 S-83048-Rev. B, 22-Dec-08 Vishay Siliconix SiR892DP New Product TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?68639. Normalized Thermal Transient Impedance, Junction-to-Ambient 10-3 10-2 1 10 1000 10-1 10-4 100 0.2 0.1 0.05 Square WavePulse Duration (s) 1 0.1 0.01 Single Pulse t1 t2 Notes: PDM 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 70 °C/W 3. TJM -TA =PDMZthJA(t) t1 t2 4. Surface Mounted Duty Cycle = 0.5 0.02 Normalized Thermal Transient Impedance, Junction-to-Case 1 0.1 0.01 0.2 Duty Cycle = 0.5 Square WavePulse Duration (s) 10-3 10-2 1 10-1 10-4 0.05 0.02 Single Pulse 0.1 |
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