Motore di ricerca datesheet componenti elettronici
  Italian  ▼
ALLDATASHEETIT.COM

X  

Preview PDF HTML

SIS782DN Scheda tecnica(PDF) 2 Page - Vishay Telefunken

Il numero della parte SIS782DN
Spiegazioni elettronici  N-Channel 30 V (D-S) MOSFET with Schottky Diode
PDF  14 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Produttore elettronici  TFUNK [Vishay Telefunken]
Homepage  http://www.vishay.com
Logo TFUNK - Vishay Telefunken

SIS782DN Scheda tecnica(HTML) 2 Page - Vishay Telefunken

  SIS782DN Datasheet HTML 1Page - Vishay Telefunken SIS782DN Datasheet HTML 2Page - Vishay Telefunken SIS782DN Datasheet HTML 3Page - Vishay Telefunken SIS782DN Datasheet HTML 4Page - Vishay Telefunken SIS782DN Datasheet HTML 5Page - Vishay Telefunken SIS782DN Datasheet HTML 6Page - Vishay Telefunken SIS782DN Datasheet HTML 7Page - Vishay Telefunken SIS782DN Datasheet HTML 8Page - Vishay Telefunken SIS782DN Datasheet HTML 9Page - Vishay Telefunken Next Button
Zoom Inzoom in Zoom Outzoom out
 2 / 14 page
background image
www.vishay.com
2
Document Number: 67954
S11-1177-Rev. A, 13-Jun-11
Vishay Siliconix
SiS782DN
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. Maximum under steady state conditions is 81 °C/W.
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambienta, b
t
 10 s
RthJA
28
34
°C/W
Maximum Junction-to-Case (Drain)
Steady State
RthJC
2.4
3.0
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
VDS
VGS = 0, ID = 1 mA
30
V
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 µA
12.3
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
± 100
nA
Zero Gate Voltage Drain Current
IDSS
VDS = 30 V, VGS = 0 V
0.028
0.200
mA
VDS = 30 V, VGS = 0 V, TJ = 100 °C
2.5
20
On-State Drain Currenta
ID(on)
VDS 5 V, VGS = 10 V
30
A
Drain-Source On-State Resistancea
RDS(on)
VGS = 10 V, ID = 10 A
0.0079
0.0095
VGS = 4.5 V, ID = 7 A
0.0096
0.0120
Forward Transconductancea
gfs
VDS = 10 V, ID = 10 A
43
S
Dynamicb
Input Capacitance
Ciss
VDS = 15 V, VGS = 0 V, f = 1 MHz
1025
pF
Output Capacitance
Coss
251
Reverse Transfer Capacitance
Crss
100
Total Gate Charge
Qg
VDS = 15 V, VGS = 10 V, ID = 10 A
20.3
30.5
nC
VDS = 15 V, VGS = 4.5 V, ID = 10 A
9.5
14.3
Gate-Source Charge
Qgs
2.8
Gate-Drain Charge
Qgd
3.2
Gate Resistance
Rg
f = 1 MHz
0.2
0.9
1.8
Turn-On Delay Time
td(on)
VDD = 15 V, RL = 1.5 
ID  10 A, VGEN = 4.5 V, Rg = 1 
11
22
ns
Rise Time
tr
22
48
Turn-Off Delay Time
td(off)
13
26
Fall Time
tf
11
22
Turn-On Delay Time
td(on)
VDD = 15 V, RL = 1.5 
ID  10 A, VGEN = 10 V, Rg = 1 
816
Rise Time
tr
13
26
Turn-Off Delay Time
td(off)
14
28
Fall Time
tf
918



Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14


Scheda tecnica Scarica

Go To PDF Page


Link URL



Lei ha avuto il aiuto da alldatasheet?  [ DONATE ] 

Di alldatasheet   |   Richest di pubblicita   |   contatti   |   Privacy Policy   |   Collegamento alla scheda tecnica    |   scambio Link   |   Ricerca produttore
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com