4

4 Meg x 4 FPM DRAM

Micron Technology, Inc., reserves the right to change products or specifications without notice.

D49_5V.p65 – Rev. 5/00

©2000, Micron Technology, Inc.

4 MEG x 4

FPM DRAM

ABSOLUTE MAXIMUM RATINGS*

3.3V............................................. ......... -1V to +4.6V

3.3V............................................. ......... -1V to +5.5V

Storage Temperature (plastic) ............ -55°C to +150°C

Power Dissipation ................................................... 1W

*Stresses greater than those listed under “Absolute Maxi-

mum Ratings” may cause permanent damage to the

device. This is a stress rating only, and functional opera-

tion of the device at these or any other conditions above

those indicated in the operational sections of this speci-

fication is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect

reliability.

DC ELECTRICAL CHARACTERISTICS AND OPERATING CONDITIONS

3.3V

5V

PARAMETER/CONDITION

SYMBOL

MIN

MAX

MIN

MAX UNITS NOTES

SUPPLY VOLTAGE

3

3.6

4.5

5.5

V

INPUT HIGH VOLTAGE:

Valid Logic 1; All inputs, I/Os and any NC

2

5.5

2.4

Vcc+1

V

24

INPUT LOW VOLTAGE:

Valid Logic 0; All inputs, I/Os and any NC

-1.0

0.8

-0.5

0.8

V

24

INPUT LEAKAGE CURRENT:

-2

2

-2

2

µA

All other pins not under test = 0V

OUTPUT HIGH VOLTAGE:

2.4

–

2.4

–

V

OUTPUT LOW VOLTAGE:

–

0.4

–

0.4

V

OUTPUT LEAKAGE CURRENT:

-5

5

-5

5

µA

DQ is disabled and in High-Z state