KAI-4021 datasheet(9/56 Pages) ONSEMI

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KAI-4021 Image Sensor

www.truesenseimaging.com

Revision 1.1 PS-0014 Pg 9

PIXEL

Figure 2: Pixel Architecture

An electronic representation of an image is formed when incident photons falling on the sensor plane create electron-

hole pairs within the individual silicon photodiodes. These photoelectrons are collected locally by the formation of

potential wells at each photosite. Below photodiode saturation, the number of photoelectrons collected at each pixel

is linearly dependent upon light level and exposure time and non-linearly dependent on wavelength. When the

photodiodes charge capacity is reached, excess electrons are discharged into the substrate to prevent blooming.

Top View

Direction

Charge

Transfer

True Two Phase Burried Channel VCCD

Lightshield over VCCD not shown

7.4

m

Photodiode

7.4

m

Transfer

Gate

Direction of

Charge

Transfer

p Well (GND)

Cross Section Down Through VCCD

n Substrate

Light Shield

Substrate

Cross Section Through

Photodiode and VCCD Phase 1

Photo

diode

Light Shield

Substrate

Cross Section Through Photodiode

and VCCD Phase 2 at Transfer Gate

Transfer

Gate

Cross Section Showing Lenslet

Drawings not scale

Lenslet

VCCD

Light Shield

Photodiode

Red Color Filter

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