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2N6303 Scheda tecnica(PDF) 2 Page - Microsemi Corporation |
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2N6303 Scheda tecnica(HTML) 2 Page - Microsemi Corporation |
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2 / 3 page ![]() MSC1062.PDF 05-25-99 2N6303 ELECTRICAL CHARACTERISTICS: ELECTRICAL CHARACTERISTICS: (25 °°Case Temperature Unless Otherwise Noted) VALUE SYMBOL CHARACTERISTIC TEST CONDITIONS Min. Max. Units VCEO(sus)* Collector-Emitter Sustaining Voltage IC = 20 mAdc, IB = 0 (Note 1) - 80 ---- Vdc BVCBO* Collector-Base Breakdown Voltage IC = 100 µµAdc, IE = 0 - 80 ---- Vdc BVEBO* Emitter-Base Breakdown Voltage IE = 100 µµAdc, IC = 0 - 4.0 ---- Vdc ICEX* Collector Cutoff Current VCE = - 80V, VBE(off) = 2.0 Vdc ---- 1.0 µµAdc ICBO* Collector Cutoff Current VCB = - 80V, IE = 0, TC = 150°°C ---- 150 µµAdc hFE* DC Current Gain (Note 1) IC = 500 mAdc, VCE = - 1.0 Vdc IC = 1.5 Adc, VCE = - 2.0 Vdc IC = 2.5 Adc, VCE = - 3.0 Vdc IC = 3.0 Adc, VCE = - 5.0 Vdc 35 30 20 20 ---- 150 ---- ---- ---- ---- ---- ---- VCE(sat)* Collector-Emitter Saturation Voltage (Note 1) IC = 500 mAdc, IB = 50 mAdc IC = 1.5 Adc, IB = 150 mAdc IC = 2.5 Adc, IB = 250 mAdc ---- ---- ---- - 0.5 - 0.75 - 1.3 Vdc Vdc Vdc VBE(sat)* Base-Emitter Saturation Voltage (Note 1) IC = 500 mAdc, IB = 50 mAdc IC = 1.5 Adc, IB = 150 mAdc IC = 2.5 Adc, IB = 250 mAdc ---- - 0.9 ---- - 1.0 - 1.4 - 2.0 Vdc Vdc Vdc fT* Current Gain Bandwidth Product (Note 2) IC = 100 mAdc, VCE = - 5.0 Vdc, ftest = 20 MHz 60 ---- MHz Cob* Output Capacitance VCB = - 10 Vdc, IE = 0, f = 0.1 MHz ---- 120 pF Cib* Input Capacitance VEB = - 3.0 Vdc, IC = 0, f = 0.1 MHz ---- 1000 pF td * Delay Time VCC = - 30 Vdc, VBE(off) = 0, IC =1.5 Adc, IB1 = 150 mAdc ---- 35 ns tr * Rise Time VCC = - 30 Vdc, VBE(off) = 0, IC =1.5 Adc, IB1 = 150 mAdc ---- 65 ns ts* Storage Time VCC = - 30 Vdc, IC = 1.5 Adc, IB1 = IB2 =150 mAdc ---- 325 ns tf* Fall Time VCC = - 30 Vdc, IC = 1.5 Adc, IB1 = IB2 =150 mAdc ---- 75 ns Note 1: Pulse Test: Pulse Width ≤≤ 300µµs, Duty Cycle ≤≤ 2.0%. Note 2: fT = |hfe| * ftest * Indicates JEDEC registered data. |
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