MSC0920.PDF 9-23-98

MS2213

DESCRIPTION:

DESCRIPTION:

The MS2213 device is a high power Class C transistor specifically

designed for JTIDS pulsed output and driver applications.

The device is capable of operation over a wide range of pulse

widths, duty cycles and temperatures and is capable of

withstanding 15:1 output VSWR at rated RF conditions.

Low RF thermal resistance and computerized automatic wire

bonding techniques ensure high reliability and product

consistency.

The MS2213 is supplied in the hermetic metal/ceramic package

with internal input matching structures.

BSOLUTE MAXIMUM RATINGS (Tcase = 25°°C)

Symbol

Parameter

Value

Unit

Power Dissipation *

≤≤ 85°°C)

75

W

Device Current *

3.5

A

Collector - Supply Voltage *

40

V

Junction Temperature (Pulsed RF Operation)

250

°°C

Storage Temperature

- 65 to + 200

°°C

Thermal Data

Thermal Data

Junction-Case Thermal Resistance

2.2

°°C/W

* Applies only to rated RF amplifier operation

Features

•• REFRACTORY/GOLD METALLIZATION

•• EMITTER SITE BALLASTED

•• 15:1 VSWR CAPABILITY

•• LOW RF THERMAL RESISTANCE

•• INPUT/OUTPUT MATCHING

•• OVERLAY GEOMETRY

•• METAL/CERAMIC HERMETIC PACKAGE

•• P

RF & MICROWAVE TRANSISTORS

SPECIALITY AVIONICS/JTIDS APPLICATIONS

140 COMMERCE DRIVE

MONTGOMERYVILLE, PA

18936-1013

PHONE: (215) 631-9840

FAX: (215) 631-9855